Quantum spin Hall states in graphene interacting with WS${}_2$ or WSe${}_2$

Abstract

In the framework of first-principles calculations, we investigate the structural and electronic properties of graphene in contact with as well as sandwiched between WS${}_2$ and WSe${}_2$ monolayers. We report the modification of the band characteristics due to the interaction at the interface and demonstrate that the presence of the dichalcogenides results in quantum spin Hall states in the absence of a magnetic field.

References in corpus (15)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Van der Waals heterostructures
• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Large-gap quantum spin Hall insulators in tin films
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Spin-orbit gap of graphene: First-principles calculations
• Nonlocal edge state transport in the quantum spin Hall state
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
• Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
• Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene
• Quantum spin Hall effect on germanene nanoroad embedded in a completely hydrogenated germanene

Cited by in corpus (24)

• Colloquium: Spintronics in graphene and other two-dimensional materials
• Giant Spin Lifetime Anisotropy in Graphene Induced by Proximity Effects
• Model spin-orbit coupling Hamiltonians for graphene systems
• Proximity effects in bilayer graphene on monolayer WSe${}_2$: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
• Twist-angle dependence of the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides
• Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
• Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS${}_2$
• Induced spin-orbit coupling in twisted graphene-TMDC heterobilayers: twistronics meets spintronics
• Materials properties of out-of-plane heterostructures of MoS${}_2$-WSe${}_2$ and WS${}_2$-MoSe${}_2$
• Magnetotransport in heterostructures of transition metal dichalcogenides and graphene
• Protected pseudohelical edge states in proximity graphene ribbons and flakes
• Majorana and parafermion corner states from two coupled sheets of bilayer graphene
• ${\mathbb{Z}}_2$ invariance of Germanene on MoS${}_2$ from first principles
• Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe${}_2$ heterostructures
• Robust Room-Temperature Quantum Spin Hall Effect in Methyl-functionalized InBi honeycomb film
• Evidence for topological proximity effect in graphene coupled to topological insulator
• Quantum Spin Hall Effect in Magnetic Graphene
• Tuning electronic properties and contact type in van der Waals heterostructures of bilayer SnS and graphene
• Topological phase in oxidized zigzag stanene nanoribbons
• Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
• Spin-active devices based on graphene / WSe${}_2$ heterostructure
• Quantum spin Hall phase in multilayer graphene
• Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe
• Tuning proximity-induced spin-orbit coupling in graphene/WSe${}_2$ heterostructures