Large-gap quantum spin Hall insulators in tin films

Abstract

The search of large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γpoint, similar to the case of HgTe quantum well. With surface doping of magnetic elements, the quantum anomalous Hall effect could also be realized.

References in corpus (11)

• Two Dimensional Atomic Crystals
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Topological Insulators with Inversion Symmetry
• Control of graphene's properties by reversible hydrogenation
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
• Prediction of weak topological insulators in layered semiconductors

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