Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices

Abstract

On the efforts of enhancing the spin orbit interaction (SOI) of graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele type SOI and high mobility samples are desired. However, common external decoration often introduces extrinsic Rashba-type SOI and simultaneous impurity scattering. Here we show, by the EDTA-Dy molecule decorating, the Kane-Mele type SOI is mimicked with even improved carrier mobility. It is evidenced by the suppressed weak localization at equal carrier densities and simultaneous Elliot-Yafet spin relaxation. The extracted spin scattering time is monotonically dependent on the carrier elastic scattering time, where the Elliot-Yafet plot gives the interaction strength of 3.3 meV. Improved quantum Hall plateaus can be even seen after the external operation. This is attributed to the spin-flexural phonon coupling induced by the enhanced graphene ripples, as revealed by the in-plane magnetotransport measurement.

References in corpus (11)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Control of graphene's properties by reversible hydrogenation
• Suspended Graphene: a bridge to the Dirac point
• Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
• Spin-orbit gap of graphene: First-principles calculations
• Three dimensional topological invariants for time reversal invariant Hamiltonians and the three dimensional quantum spin Hall effect
• Weak localisation magnetoresistance and valley symmetry in graphene
• Edge conduction in monolayer WTe2
• Neutral-current Hall effects in disordered graphene
• Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms