375 citations · 910 across the 9 of their papers we have counts for
9 papers
Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact
Xiujun Wang, Sannian Song, Haomin Wang +15
Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programm…
Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride
Hui Shan Wang, Lingxiu Chen, Kenan Elibol +16
The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitr…
Grain Boundaries in Chemical Vapor Deposited Atomically Thin Hexagonal Boron Nitride
Xibiao Ren, Jichen Dong, Peng Yang +8
Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously…
Application of sodium-ion-based solid electrolyte in electrostatic tuning of carrier density in graphene
Jialin Zhao, Meng Wang, Xuefu Zhang +5
Using a solid electrolyte to tune the carrier density in thin-film materials is an emerging technique that has potential applications in both basic and applied research. Until now,…
Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride
Lingxiu Chen, Haomin Wang, Shujie Tang +8
Edge structure of graphene has a significant influence on its electronic properties. However, control over the edge structure of graphene domains on insulating substrates is still…
Oriented Graphene Nanoribbons Embedded in Hexagonal Boron Nitride Trenches
Lingxiu Chen, Li He, Hui Shan Wang +13
Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled…
Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy
Guangyuan Lu, Tianru Wu, Qinghong Yuan +5
Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices.…
Mimicing the Kane-Mele type spin orbit interaction by spin-flexual phonon coupling in graphene devices
Zhanbin Bai, Rui Wang, Yazhou Zhou +12
On the efforts of enhancing the spin orbit interaction (SOI) of graphene for seeking the dissipationless quantum spin Hall devices, unique Kane-Mele type SOI and high mobility samp…
Triggering the Continuous Growth of Graphene toward Millimeter Size Grain
Tianru Wu, Guqiao Ding, Honglie Shen +5
In this report, we demonstrated a simple but efficient strategy to synthesize millimeter-sized graphene single crystal grains by regulating the supply of reactants in chemical vapo…