Towards Chirality Control of Graphene Nanoribbons Embedded in Hexagonal Boron Nitride
arXiv:2009.12822 · doi:10.1038/s41563-020-00806-2
Abstract
The integrated inplane growth of two dimensional materials with similar lattices, but distinct electrical properties, could provide a promising route to achieve integrated circuitry of atomic thickness. However, fabrication of edge specific GNR in the lattice of hBN still remains an enormous challenge for present approaches. Here we developed a two step growth method and successfully achieved sub 5 nm wide zigzag and armchair GNRs embedded in hBN, respectively. Further transport measurements reveal that the sub 7 nm wide zigzag GNRs exhibit openings of the band gap inversely proportional to their width, while narrow armchair GNRs exhibit some fluctuation in the bandgap width relationship.This integrated lateral growth of edge specific GNRs in hBN brings semiconducting building blocks to atomically thin layer, and will provide a promising route to achieve intricate nanoscale electrical circuits on high quality insulating hBN substrates.
84 pages,46 figures
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Cited by in corpus (12)
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- Unveiling and Manipulating Hidden Symmetries in Graphene Nanoribbons
- One-dimensional magnetic conduction channels across zigzag graphene nanoribbon/hexagonal boron nitride heterojunctions
- Signatures of magnetism in zigzag graphene nanoribbon embedded in h-BN lattice
- Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions
- Realizing One-dimensional Metallic States in Graphene via Periodically Coupled Zeroth Pseudo-Landau Levels
- Boron nitride-graphene in-plane hexagonal heterostructure in oxygen environment
- Ultraclean suspended graphene by radiolysis of adsorbed water
- Potential-tuned magnetic switches and half-metallicity transition in zigzag graphene nanoribbons
- A DFT Study on the Electronic Structure of In-Plane Heterojunctions of Graphene and Hexagonal Boron Nitride Nanoribbons