Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride
arXiv:1503.02806 · doi:10.1038/ncomms7499
Abstract
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 nm with a growth rate of ~1 nm/min or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 um/min, thereby promoting graphene domains up to 20 um in size to be synthesized via chemical vapor deposition on hexagonal boron nitride. Hall measurements show that the mobility of the sample reaches 20,000 cm2/Vs at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.
21 pages, 5 figures, Supplementary information
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- Rapid and catalyst-free CVD growth of graphene on hBN
- Direct observation of layer-stacking and oriented wrinkles in multilayer hexagonal boron nitride
- Edge Control of Graphene Domains Grown on Hexagonal Boron Nitride
- Signatures of magnetism in zigzag graphene nanoribbon embedded in h-BN lattice
- Chemical vapor deposition growth of bilayer graphene in between molybdenum disulfide sheets
- Moiré Imaging in Twisted Bilayer Graphene Aligned on Hexagonal Boron Nitride
- Electromagnetic Absorption as a Novel Tool in Chemical Vapor Deposition Toolbox: Ultra-Fast Growth of Continuous Graphene Film