Graphene growth on h-BN by Molecular Beam Epitaxy
arXiv:1204.2443 · doi:10.1016/j.ssc.2012.04.005
Abstract
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of single-layer graphene is clearly apparent in Raman spectra which display sharp optical phonon bands. Atomic-force microscope images and Raman maps reveal that the graphene grown depends on the surface morphology of the h-BN substrates. The growth is governed by the high mobility of the carbon atoms on the h-BN surface, in a manner that is consistent with van der Waals epitaxy. The successful growth of graphene layers depends on the substrate temperature, but is independent of the incident flux of carbon atoms.
Solid State Communications, 2012
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Cited by in corpus (8)
- Van der Waals heterostructures
- Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition
- Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride
- Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures
- Rapid and catalyst-free CVD growth of graphene on hBN
- Coulomb drag in graphene - boron nitride heterostructures: the effect of virtual phonon exchange
- Molecular beam growth of graphene on mica
- Effect of piezoelectric substrate on phonon-drag thermopower in monolayer graphene