Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment

Abstract

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to monolayer graphene growth on SiO2/Si. The produced monolayer graphene exhibits high carrier mobility of up to 3000 cm2 V-1s-1 at room temperature and standard half-integer quantum oscillations.

arXiv comment22 pages, 7 figures

References in corpus (5)

• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
• Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride
• Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy