Electromagnetic Absorption as a Novel Tool in Chemical Vapor Deposition Toolbox: Ultra-Fast Growth of Continuous Graphene Film
arXiv:1910.00552
Abstract
This report introduces the electromagnetic absorption of the catalyst as a novel knob in optimizing chemical vapor deposition of graphene. A chromium film initially deposited at one side of a catalyst copper foil absorbs radiative thermal energy several times higher than the plain copper foil and migrates to the other side of the foil in the form of microscale grains. The process involves local melting of the copper which together with the increased operation temperature, improves the crystalline quality of growing graphene. Local melting of copper replaces the otherwise-necessary annealing process; dramatically lowering the process duration and costs. Now a continuous graphene film can be grown in only five minutes, nominating the protocol as the shortest ever reported. The observations reported in this manuscript boost the general knowledge about metal mixture, additional to promoting graphene growth science and technology.
References in corpus (6)
- The Raman Fingerprint of Graphene
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Silane-Catalyzed Fast Growth of Large Single-Crystalline Graphene on Hexagonal Boron Nitride
- High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition
- Spectral emissivity of copper and nickel in the mid-infrared range between 250 and 900 C
- Hybrid cold and hot-wall chamber for fast synthesis of uniform graphene