Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

Abstract

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.

4 pages, 3 figures

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• Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
• Nanofaceting as a stamp for periodic graphene charge carrier modulations
• Fermi resonance in the Raman spectrum of graphene
• Electrical Conductivity of Copper-Graphene (Cu-Gr) Composites: The Underlying Mechanisms of Ultrahigh Conductivity
• Electromagnetic Absorption as a Novel Tool in Chemical Vapor Deposition Toolbox: Ultra-Fast Growth of Continuous Graphene Film
• Taxonomy of defects in semi-dry transferred CVD graphene
• Phonon-Induced Transparency in Functionalized Single Layer Graphene
• Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration