Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition
arXiv:1202.1031 · doi:10.1088/1367-2630/14/9/093028
Abstract
We evaluate how a second graphene layer forms and grows on Cu foils during chemical vapor deposition (CVD). Low-energy electron diffraction and microscopy is used to reveal that the second layer nucleates and grows next to the substrate, i.e., under a graphene layer. This underlayer mechanism can facilitate the synthesis of uniform single-layer films but presents challenges for growing uniform bilayer films by CVD. We also show that the buried and overlying layers have the same edge termination.
Revised after review. Accepted for publication in New Journal of Physics
References in corpus (4)
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Cited by in corpus (10)
- Optical Third-Harmonic Generation in Graphene
- Low-energy Electron Reflectivity from Graphene
- Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper
- Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates
- Bilayer Graphene Growth via a Penetration Mechanism
- Characterization of hexagonal boron nitride layers on nickel surfaces by low-energy electron microscopy
- Chemical-Vapor-Deposited Graphene as a Thermally Conducting Coating
- Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
- Carbon Impurities on Graphene Synthesized by Chemical Vapor Deposition on Platinum
- Restoring self-limited growth of single-layer graphene on copper foil via backside coating