Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
arXiv:1011.4201 · doi:10.1021/nl1029978
Abstract
The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited to um size scale thus far, and synthesis of wafer scale bilayer graphene posts tremendous challenge. Here we report homogeneous bilayer graphene films over at least 2 inch x 2 inch area, synthesized by chemical vapor deposition on copper foil and subsequently transferred to arbitrary substrates. The bilayer nature of graphene film is verified by Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy (TEM). Importantly, spatially resolved Raman spectroscopy confirms a bilayer coverage of over 99%. The homogeneity of the film is further supported by electrical transport measurements on dual-gate bilayer graphene transistors, in which bandgap opening is observed in 98% of the devices.
arXiv comment23 pages, 5 figures in the main text, 1 supporting information, 5 figures and 1 table in the supporting information
References in corpus (21)
- The electronic properties of graphene
- The Raman Fingerprint of Graphene
- Graphene: Status and Prospects
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- Energy Band Gap Engineering of Graphene Nanoribbons
- The structure of suspended graphene sheets
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene
- Substrate-induced band gap opening in epitaxial graphene
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Gate-induced insulating state in bilayer graphene devices
- Graphene Nano-Ribbon Electronics
- Raman scattering from high frequency phonons in supported n-graphene layer films
- Asymmetry gap in the electronic band structure of bilayer graphene
- Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
- Graphene Segregated on Ni surfaces and Transferred to Insulators
- Wafer-scale synthesis and transfer of graphene films
- Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
- On the roughness of single- and bi-layer graphene membranes
- Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers
- Growth of large-area single- and bi-layer graphene by controlled carbon precipitation on polycrystalline Ni surfaces
- Tunable Excitons in Biased Bilayer Graphene
Cited by in corpus (32)
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Structure and electronic transport in graphene wrinkles
- First-Principles Thermodynamics of Graphene Growth on Cu Surface
- Towards wafer scale fabrication of graphene based spin valve devices
- Single-step deposition of high-mobility graphene at reduced temperatures
- Graphene transistors are insensitive to pH changes in solution
- Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition
- Metal Oxide Resistive Memory using Graphene Edge Electrode
- Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport
- Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
- Controllable growth of 1-7 layers of graphene by chemical vapour deposition
- Statistical-Raman-Microscopy and Atomic-Force-Microscopy on Heterogeneous Graphene Obtained after Reduction of Graphene Oxide
- Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates
- Flexible and Transparent All-Graphene Circuits for Quaternary Digital Modulations
- Superconductivity and correlated phases in non-twisted bilayer and trilayer graphene
- Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
- Investigation of the Thermal Stability of the Carbon Framework of Graphene Oxide
- Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition
- Homogeneous bilayer graphene film based flexible transparent conductor
- Bilayer Graphene Growth via a Penetration Mechanism
- Magnetotransport Properties of Quasi-Free Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking
- Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils
- Raman spectroscopic characterization of stacking configuration and interlayer coupling of twisted multilayer graphene grown by chemical vapor deposition
- Engineering THz-frequency light generation, detection and manipulation through graphene
- Growth and applications of two-dimensional single crystals
- Evidence of electronic cloaking from chiral electron transport in bilayer graphene nanostructures
- Direct Growth of Graphene on Flexible Substrates Towards Flexible Electronics: A Promising Perspective
- AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport
- Spectroscopic Studies of the Physical Origin of Environmental Aging Effects on Doped Graphene
- h-BN layer induced chiral decomposition in the electronic properties of multilayer graphene
- Copper Vapor Catalyzing Role in the Growth of Graphene
- An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics