Copper Vapor Catalyzing Role in the Growth of Graphene

Abstract

Cu is most used substrate to grow monolayer graphene under a temperature near melting point. In this study, we elaborated a remarkable amount of Cu clusters were continuously evaporated during the graphene growth, resulting into the vapor pressure comparable with the CH4. Importantly, the decomposition barrier of CH4 on Cu clusters is similar or even lower than on Cu surface. CuCH4 serves as the primary active cluster in complex intermediates, exhibiting a growth-promoting effect. Particularly after the first graphene layer coverage, it may emerge as a dominant catalytic factor for multilayer growth by supplying critical growth species. Through controlled seed incorporation, this mechanism is expected to enable large-area controllable growth of bilayer and multilayer graphene structures.

References in corpus (6)

• Graphene films with large domain size by a two-step chemical vapor deposition process
• Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
• Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge
• High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition
• Graphene promotes axon elongation through local stall of Nerve Growth Factor signaling endosomes
• Magic Graphene Clusters Formation in the graphene CVD growth process on Ru and Rh