Controllable growth of 1-7 layers of graphene by chemical vapour deposition
arXiv:1406.2159 · doi:10.1016/j.carbon.2014.02.061
Abstract
We report that graphene films with thickness ranging from 1 to 7 layers can be controllably synthesized on the surface of polycrystalline copper by a chemical vapour deposition method. The number of layers of graphene is controlled precisely by regulating the flow ratio of CH4 and H2, the reaction pressure, the temperature and the reaction time. The synthesized graphene films were characterized by scanning electron microscopy, transmission electron microscopy, selected area electron diffraction, X-ray diffraction and Raman spectroscopy. In addition, the graphene films transferred from copper to other substrates are found to have a good optical transmittance that makes them suitable for transparent conductive materials.
arXiv comment19 pages, 6 figures. This is the authors' version. The published, high resolution version of this paper, Copyright (2014) by Elsevier, can be found at http://www.journals.elsevier.com/carbon/
References in corpus (10)
- Electric Field Effect in Atomically Thin Carbon Films
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
- Ultrafast graphene photodetector
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Dimensional crossover of thermal transport in few-layer graphene materials
- Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition