Quasi-Periodic Nanoripples in Graphene Grown by Chemical Vapor Deposition and Its Impact on Charge Transport
arXiv:1302.1310 · doi:10.1021/nn203775x
Abstract
The technical breakthrough in synthesizing graphene by chemical vapor deposition methods (CVD) has opened up enormous opportunities for large-scale device applications. In order to improve the electrical properties of CVD graphene grown on copper (Cu-CVD graphene), recent efforts have focussed on increasing the grain size of such polycrystalline graphene films to 100 micrometers and larger. While an increase in grain size and hence, a decrease of grain boundary density is expected to greatly enhance the device performance, here we show that the charge mobility and sheet resistance of Cu-CVD graphene is already limited within a single grain. We find that the current high-temperature growth and wet transfer methods of CVD graphene result in quasi-periodic nanoripple arrays (NRAs). Electron-flexural phonon scattering in such partially suspended graphene devices introduces anisotropic charge transport and sets limits to both the highest possible charge mobility and lowest possible sheet resistance values. Our findings provide guidance for further improving the CVD graphene growth and transfer process.
arXiv comment17 pages, 4 figures
References in corpus (28)
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Graphene: Status and Prospects
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
- Graphene Photonics and Optoelectronics
- Boron nitride substrates for high-quality graphene electronics
- Control of graphene's properties by reversible hydrogenation
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Tuning the graphene work function by electric field effect
- All-graphene integrated circuits via strain engineering
- Graphene films with large domain size by a two-step chemical vapor deposition process
- Electron scattering on microscopic corrugations in graphene
- Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
- Boron Nitride Substrates for High Mobility Chemical Vapor Deposited Graphene
- Limits on electron quality in suspended graphene due to flexural phonons
- Gate-controlled non-volatile graphene-ferroelectric memory
- Towards wafer scale fabrication of graphene based spin valve devices
- Graphene field effect transistors with ferroelectric gating
- The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
- Temperature-dependent resistivity of suspended graphene
- Gaps tunable by electrostatic gates in strained graphene
- Temperature dependent resistivity in bilayer graphene due to flexural phonons
- Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
- Pinning of a two-dimensional membrane on top of a patterned substrate: the case of graphene
Cited by in corpus (30)
- Breakdown of continuum mechanics for nanometer-wavelength rippling of graphene
- Graphene-Ferroelectric Hybrid Structure for Flexible Transparent Electrodes
- An innovative way of etching MoS2: Characterization and mechanistic investigation
- Strain superlattices and macroscale suspension of Graphene induced by corrugated substrates
- Formation and control of wrinkles in graphene by the wedging transfer method
- Tuning Optical Conductivity of Large-Scale CVD Graphene by Strain Engineering
- Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper
- Graphene Induced Surface Reconstruction of Cu
- Quantum Wires and Waveguides Formed in Graphene by Strain
- Subwavelength THz imaging of graphene photoconductivity
- Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition
- Conductivity of epitaxial and CVD graphene with correlated line defects
- Entropic Effects of Thermal Rippling on van der Waals Interactions between Monolayer Graphene and a Rigid Substrate
- Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
- Controlling the nanoscale rippling of graphene with SiO2 nanoparticles
- Large-scale transfer and characterization of macroscopic periodically nano-rippled graphene
- Electric field-controlled rippling of graphene
- When Energy and Information Revolutions Meet 2D Janus
- Enhanced electrical transport through wrinkles in turbostratic graphene films
- Transmission in graphene through a double laser barrier
- Klein collimation by rippled graphene superlattice
- Spin-dependent electron transmission across the corrugated graphene
- Nanoscale Topographical Replication of Graphene Architecture by Artificial DNA nanostructures
- Transport properties in gapped graphene through magnetic barrier in a laser field
- Graphene Induced Large Shift of Surface Plasmon Resonances of Gold Films: Effective Medium Theory for Atomically Thin Materials
- Valley focusing effect in a rippled graphene superlattice
- Mapping the nanomechanical properties of graphene suspended on silica nanoparticles
- Generation of Multiple Dirac Cones in Graphene under Double-periodic and Quasiperiodic Potentials
- Tunable Dirac points and zero-energy modes in periodic curved graphene superlattices
- Spin-dependent transmission in curved graphene superlattice