Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric.

References in corpus (9)

• Boron nitride substrates for high-quality graphene electronics
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Suspended Graphene: a bridge to the Dirac point
• Temperature dependent transport in suspended graphene
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Multicomponent fractional quantum Hall effect in graphene
• Limits on electron quality in suspended graphene due to flexural phonons
• Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
• Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

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