Mechanically transferred large-area Ga$_2$O$_3$ passivates graphene and suppresses interfacial phonon scattering

Matthew Gebert; Semonti Bhattacharyya; Christopher C Bounds; Nitu Syed; Torben Daeneke; Michael S Fuhrer

doi:10.1021/acs.nanolett.2c03492

paper

Mechanically transferred large-area Ga $_{2}$ O $_{3}$ passivates graphene and suppresses interfacial phonon scattering

arXiv:2206.02328 · doi:10.1021/acs.nanolett.2c03492

Abstract

We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga $_{2}$ O $_{3}$ synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimetre-scale passivated and bare graphene on SiO $_{2}$ /Si indicate that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO $_{2}$ by high-dielectric-constant Ga $_{2}$ O $_{3}$ , and the relatively high characteristic phonon frequencies of Ga $_{2}$ O $_{3}$ . Raman spectroscopy and electrical measurements indicate that Ga $_{2}$ O $_{3}$ passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al $_{2}$ O $_{3}$ .

arXiv commentJournal article, 10 pages, 4 figures

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Roadmap on Quantum Magnetic Materials

Mechanically transferred large-area Ga2​O3​ passivates graphene and suppresses interfacial phonon scattering

Abstract

References in corpus (14)

Cited by in corpus (1)

Mechanically transferred large-area Ga $_{2}$ O $_{3}$ passivates graphene and suppresses interfacial phonon scattering