Substrate limited electron dynamics in graphene

Abstract

We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the interface between graphene and the substrate. This mechanism results in a density dependent electrical resistivity, that exhibits a sharp increase around room temperature, where it can become the dominant limiting factor of electron transport. The effects are weaker in doped bilayer graphene, due to the more conventional parabolic band dispersion.

4 pages, 3 figs. Corrected for spinor overlap factors

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• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• A self-consistent theory for graphene transport
• Dynamical polarization of graphene at finite doping
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
• Quantum transport of massless Dirac fermions in graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Tunable Frohlich Polarons in Organic Single-Crystal Transistors
• Electron scattering on microscopic corrugations in graphene
• Graphene Spin Valve Devices
• Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
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Cited by in corpus (148)

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• Electronic transport in two dimensional graphene
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• Energy Dissipation and Transport in Nanoscale Devices
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• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
• Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
• Photocurrent in graphene harnessed by tunable intrinsic plasmons
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• The quasi-free-standing nature of graphene on H-saturated SiC(0001)
• Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene
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• The role of contact resistance in graphene field-effect devices
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• Electron spin relaxation in graphene: the role of the substrate
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• Charge Scattering and Mobility in Atomically Thin Semiconductors
• Highly tunable hybrid metamaterials employing split-ring resonators strongly coupled to graphene surface plasmons
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• Unraveling the acoustic electron-phonon interaction in graphene
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• Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
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• Phonon-mediated mid-infrared photoresponse of graphene
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• Interlayer coupling enhancement in graphene/hexagonal boron nitride heterostructures by intercalated defects and vacancies
• Optical Probing of Electronic Interaction between Graphene and Hexagonal Boron Nitride
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• Designing substrates for silicene and germanene: First-principles calculations
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• Chirality-dependent phonon-limited resistivity in multiple layers of graphene
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• Correlation between resistance fluctuations and temperature dependence of conductivity in graphene
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• Polaronic effects in monolayer black phosphorus on polar substrates
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• Non-linear resistivity and heat dissipation in monolayer graphene
• Electron Transport Properties of Bilayer Graphene
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• Many-body effects in doped graphene on a piezoelectric substrate
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• THz response of nonequilibrium electrons of highly doped graphene on a polar substrate
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