Substrate limited electron dynamics in graphene
arXiv:0711.1303 · doi:10.1103/PhysRevB.77.195415
Abstract
We study the effects of polarizable substrates such as SiO2 and SiC on the carrier dynamics in graphene. We find that the quasiparticle spectrum acquires a finite broadening due to the long-range interaction with the polar modes at the interface between graphene and the substrate. This mechanism results in a density dependent electrical resistivity, that exhibits a sharp increase around room temperature, where it can become the dominant limiting factor of electron transport. The effects are weaker in doped bilayer graphene, due to the more conventional parabolic band dispersion.
4 pages, 3 figs. Corrected for spinor overlap factors
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Cited by in corpus (10)
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Screening induced temperature dependent transport in 2D graphene
- High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
- High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
- Diffusive Charge Transport in Graphene on SiO2
- Effect of Holstein phonons on the electronic properties of graphene
- Models of electron transport in single layer graphene
- Evanescent wave transport and shot noise in graphene: ballistic regime and effect of disorder
- Dynamic polarization of graphene by moving external charges: random phase approximation
- Hopping dynamics of interacting polarons