Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
arXiv:0711.0754 · doi:10.1103/PhysRevB.77.115449
Abstract
We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e. gated or doped with a tunable and finite carrier density) 2D graphene layers as a function of temperature and carrier density . We find a temperature dependent phonon-limited resistivity to be linear in temperature for $T\agt 50 K$ with the room temperature intrinsic mobility reaching values above cm. We comment on the low-temperature Bloch-Grüneisen behavior where for unscreened electron-phonon coupling.
arXiv comment6 pages, 5 figures
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