Infrared spectroscopic study of carrier scattering in gated CVD graphene

Abstract

We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy, and determined carrier scattering rate (g) as function of the varied carrier density (n). The n-dependent g(n) was obtained for a series of conditions systematically changed as (10 K, vacuum) -> (300 K, vacuum) -> (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (=A/sqrt(n)) and short-range defect (=B*sqrt(n)) are the major scattering sources which constitute the total scattering g=A/sqrt(n)+B*sqrt(n), (2) among various kinds of phonons populated at room-T, surface polar phonon of the SiO2 substrate is the dominantly scattering source, (3) in air, the gas molecules adsorbed on graphene play a dual role in carrier scattering as charged impurity center and resonant scattering center. We present the absolute scattering strengths of those individual scattering sources, which provides the complete map of scattering mechanism of CVD graphene for the first time. This scattering map allows us find out practical measures to suppress the individual scatterings, the mobility gains accompanied by them, and finally the ultimate attainable carrier mobility for CVD graphene.

arXiv comment14 pages, 6 figures

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Cited by in corpus (7)

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• Suppression of multiphoton resonances in driven quantum systems via pulse shape optimization
• Effect of uniaxial strain on the optical Drude scattering in graphene
• Infrared study of carrier scattering mechanism in ion-gated graphene
• Observation of optical absorption correlated with surface state of topological insulator
• Pulse shaping in the terahertz frequency range for the control of photo-excited carriers in graphene