Theory and computation of Hall scattering factor in graphene

Abstract

The Hall scattering factor, $r$, is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments it is usually assumed to be 1. In this paper we use a combination of analytical and \textit{ab initio} modelling to determine $r$ in graphene. While at high carrier densities $r\approx 1$ in a wide temperature range, at low doping the temperature dependence of $r$ is very strong with values as high as 4 below 300~K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures $r$ can instead become as low as $0.5$ due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately $r$ in graphene in a wide range of temperatures and carrier densities.

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