159 citations · 662 across the 7 of their papers we have counts for
14 papers
Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN and MgSiN
Joshua Leveillee, Samuel Ponce, Nicholas L. Adamski +2
The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via…
Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors
Chelsea Q. Xia, Jiali Peng, Samuel Poncé +11
Semiconducting polycrystalline thin films are cheap to produce and can be deposited on flexible substrates, yet high-performance electronic devices usually utilize single-crystal s…
Superconducting properties of MoTe from the anisotropic Migdal-Eliashberg theory
Hari Paudyal, Samuel Poncé, Feliciano Giustino +1
Molybdenum ditelluride (MoTe) is attracting considerable interest since it is the archetypal type-II Weyl semimetal and a candidate for topological superconductivity. We invest…
First-principles predictions of Hall and drift mobilities in semiconductors
Samuel Ponce, Francesco Macheda, Elena Roxana Margine +3
Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remain…
Structural, electronic, elastic, power and transport properties of -GaO from first-principles
Samuel Poncé, Feliciano Giustino
We investigate the structural, electronic, vibrational, power and transport properties of the allotrope of GaO from first-principles. We find phonon frequencies and ela…
Route to high hole mobility in GaN via reversal of crystal-field splitting
Samuel Poncé, Debdeep Jena, Feliciano Giustino
A fundamental obstacle toward the realization of GaN p-channel transistors is its low hole mobility. Here we investigate the intrinsic phonon-limited mobility of electrons and hole…