159 citations · 675 across the 8 of their papers we have counts for
12 papers · 1 filter
Self-consistent electron lifetimes for electron-phonon scattering
Jae-Mo Lihm, Samuel Poncé, Cheol-Hwan Park
Acoustic phonons in piezoelectric materials strongly couple to electrons through a macroscopic electric field. We show that this coupling leads to a momentum-dependent divergence o…
Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN and MgSiN
Joshua Leveillee, Samuel Ponce, Nicholas L. Adamski +2
The key obstacle toward realizing integrated gallium nitride (GaN) electronics is its low hole mobility. Here, we explore the possibility of improving the hole mobility of GaN via…
First-principles predictions of Hall and drift mobilities in semiconductors
Samuel Ponce, Francesco Macheda, Elena Roxana Margine +3
Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however, the role of various approximations remain…
Structural, electronic, elastic, power and transport properties of -GaO from first-principles
Samuel Poncé, Feliciano Giustino
We investigate the structural, electronic, vibrational, power and transport properties of the allotrope of GaO from first-principles. We find phonon frequencies and ela…
Route to high hole mobility in GaN via reversal of crystal-field splitting
Samuel Poncé, Debdeep Jena, Feliciano Giustino
A fundamental obstacle toward the realization of GaN p-channel transistors is its low hole mobility. Here we investigate the intrinsic phonon-limited mobility of electrons and hole…
Hole mobility of strained GaN from first principles
Samuel Poncé, Debdeep Jena, Feliciano Giustino
Nitride semiconductors are ubiquitous in optoelectronic devices such as LEDs and Blu-Ray optical disks. A major limitation for further adoption of GaN in power electronics is its l…