Accurate prediction of Hall mobilities in two-dimensional materials through gauge-covariant quadrupolar contributions
arXiv:2207.10187 · doi:10.1103/PhysRevLett.130.166301
Abstract
Despite considerable efforts, accurate computations of electron-phonon and carrier transport properties of low-dimensional materials from first principles have remained elusive. By building on recent advances in the description of long-range electrostatics, we develop a general approach to the calculation of electron-phonon couplings in two-dimensional materials. We show that the nonanalytic behavior of the electron-phonon matrix elements depends on the Wannier gauge, but that a missing Berry connection restores invariance to quadrupolar order. We showcase these contributions in a MoS monolayer, calculating intrinsic drift and Hall mobilities with precise Wannier interpolations. We also find that the contributions of dynamical quadrupoles to the scattering potential are essential, and that their neglect leads to errors of 23% and 76% in the room temperature electron and hole Hall mobilities, respectively.
arXiv comment6 pages and 2 figures
References in corpus (37)
- Phonons and related properties of extended systems from density-functional perturbation theory
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Optimized norm-conserving Vanderbilt pseudopotentials
- Maximally localized Wannier functions: Theory and applications
- The PseudoDojo: Training and grading a 85 element optimized norm-conserving pseudopotential table
- Wannier90 as a community code: new features and applications
- Electron-phonon interactions from first principles
- Solar-energy conversion and light emission in an atomic monolayer p-n diode
- First-principles study of the phonon-limited mobility in n-type single-layer MoS2
- EPW: Electron-phonon coupling, transport and superconducting properties using maximally localized Wannier functions
- Two dimensional semiconductors with possible high room temperature mobility
- Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
- Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles
- Towards barrier free contact to MoS2 using graphene electrodes
- Fröhlich electron-phonon vertex from first principles
- First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
- Towards predictive many-body calculations of phonon-limited carrier mobilities in semiconductors
- Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene
- Acoustic phonon limited mobility in two-dimensional semiconductors: Deformation potential and piezoelectric scattering in monolayer MoS2 from first principles
- First-principles method for electron-phonon coupling and electron mobility: Applications to 2D materials
- Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations
- Wannier interpolation of the electron-phonon matrix elements in polar semiconductors: Polar-optical coupling in GaAs
- Breakdown of optical phonons' splitting in two-dimensional materials
- Adiabatic and non-adiabatic phonon dispersion in a Wannier function approach
- Flexoelectricity from density-functional perturbation theory
- Mobility of 2D materials from first principles in an accurate and automated framework
- First-principles predictions of Hall and drift mobilities in semiconductors
- Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids
- Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles
- Limits to Electrical Mobility in Lead-Halide Perovskite Semiconductors
- Piezoelectric Electron-Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN
- Long-range quadrupole electron-phonon interaction from first principles
- First-principles theory of spatial dispersion: Dynamical quadrupoles and flexoelectricity
- Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
- Magneto-transport phenomena in p-doped diamond from first principles
- Phonon-limited Mobility of 2D Semiconductors: Quadrupole Scattering and Free-carrier Screening
- Ab initio dipolar electron-phonon interactions in two-dimensional materials
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