Two dimensional semiconductors with possible high room temperature mobility

Abstract

We calculated the longitudinal acoustic phonon limited electron mobility of 14 two dimensional semiconductors with composition of MX${}_2$, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by deformation potential approximation. We found that out of the 14 compounds, MoTe${}_2$, HfSe${}_2$ and HfTe${}_2$, are promising regarding to the possible high mobility and finite band gap. The phonon limited mobility can be above 2500 cm${}^2$V${}^{-1}$s${}^{-1}$ at room temperature.

References in corpus (3)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Channel Length Scaling of MoS2 MOSFETs

Cited by in corpus (3)

• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Three-particle Complexes in Two-Dimensional Semiconductors
• Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs