Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

Abstract

A long-wavelength infrared (IR) photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal imaging, biomedical optics, and medical imaging. However, sub-bandgap light detection in graphene and black phosphorus has been a long-standing scientific challenge because of low photoresponsivity, instability in the air and highdark current. In this study, we report a highly sensitive, air-stable and operable long-wavelength infrared photodetector at room temperature based on PdSe2 phototransistors and its heterostructure. A high photoresponsivity of ~42.1 AW-1 (at 10.6 μm) was demonstrated, which is an order of magnitude higher than the current record of platinum diselenide. Moreover, the dark current and noise power density were suppressed effectively by fabricating a van der Waals heterostructure. This work fundamentally contributes to establishing long-wavelength infrared detection by PdSe2 at the forefront of long-IR two-dimensional-materials-based photonics.

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Cited by in corpus (7)

• Van der Waals heterostructures for high-performance device applications: challenges and opportunities
• Electron irradiation on multilayer PdSe${}_2$ field effect transistors
• Performance analysis of photodetectors based on 2D materials and heterostructures
• Zero-bias photodetection in 2d materials via geometric design of contacts
• High-Performance Mid-IR to Deep-UV van der Waals Photodetectors Capable of Local Spectroscopy at Room Temperature
• Gate-Tunable Multi-Band van der Waals Photodetector and Polarization Sensor
• Layer-dependent Optical and Dielectric Properties of Large-size PdSe${}_2$ Films Grown by Chemical Vapor Deposition