activity
20152020
most citedRoom-temperature high detectivity mid-infrared photodetectors based on black arsenic phosphorus

603 citations · 1.7k across the 10 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2020★ 5 cited

Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation

Faji Xie, Zhen Lian, Shuai Zhang +13

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphe…

cond-mat.mtrl-sci2020

Chargeable photoconductivity in Van der Waals heterojunctions

Yucheng Jiang, Anpeng He, Yu Chen +9

Van der Waals (vdW) heterojunctions, based on two-dimensional (2D) materials, show great potential for the development of eco-friendly and high-efficiency nano-devices. Considerabl…

physics.app-ph2019★ 29 cited

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Song Hao, Shengnan Yan, Yang Wang +17

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it…

physics.app-ph2019★ 308 cited

Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability

Mingsheng Long, Yang Wang, Peng Wang +11

A long-wavelength infrared (IR) photodetector based on two-dimensional materials working at room temperature would have wide applications in many aspects in remote sensing, thermal…

cond-mat.mes-hall2018

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

Yu Wang, Erfu Liu, Anyuan Gao +9

Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matt…

cond-mat.mes-hall2018★ 32 cited

Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors

Chen Pan, Yajun Fu, Jiaxin Wang +12

The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with in…