Broadband Photovoltaic Detectors based on an Atomically Thin Heterostructure
arXiv:1601.01814 · doi:10.1021/acs.nanolett.5b04538
Abstract
Van der Waals junctions of two-dimensional materials with an atomically sharp interface open up unprecedented opportunities to design and study functional heterostructures. Semiconducting transition metal dichalcogenides have shown tremendous potential for future applications due to their unique electronic properties and strong light-matter interaction. However, many important optoelectronic applications, such as broadband photodetection, are severely hindered by their limited spectral range and reduced light absorption. Here, we present a p-g-n heterostructure formed by sandwiching graphene with a gapless bandstructure and wide absorption spectrum in an atomically thin p-n junction to overcome these major limitations. We have successfully demonstrated a MoS2-graphene-WSe2 heterostructure for broadband photodetection in the visible to short-wavelength infrared range at room temperature that exhibits competitive device performance, including a specific detectivity of up to 1011 Jones in the near-infrared region. Our results pave the way toward the implementation of atomically thin heterostructures for broadband and sensitive optoelectronic applications.
Submitted to Nano Letters; 25 pages, 4 figures, 7 supplementary figures
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- Photodetecting and Light-Emitting Devices Based on Two Dimensional Materials
- Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping
- Analog Circuit Applications based on Ambipolar Graphene/MoTe2 Vertical Transistors
- Light emission from the layered metal 2H-TaSe and its potential applications
- Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors
- Surface-diffusion-limited growth of atomically thin WS2 crystals from core-shell nuclei
- Room temperature infrared photodetectors with hybrid structure based on 2D materials
- Broadband Optical Detection using the Spin Seebeck Effect
- Unified benchmarking and characterization protocol for nanomaterial-based heterogeneous photodetector technologies