Room temperature infrared photodetectors with hybrid structure based on 2D materials

Abstract

Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), black phosphorus (BP) and related derivatives, have attracted great attention due to their advantages of flexibility, strong light-matter interaction, broadband absorption and high carrier mobility, and have become a powerful contender for next-generation infrared photodetectors. However, since the thickness of two-dimensional materials is on the order of nanometers, the absorption of two-dimensional materials is very weak, which limits the detection performance of 2D materials-based infrared photodetector. In order to solve this problem, scientific researchers have tried to use optimized device structures to combine with two-dimensional materials for improving the performance of infrared photodetector. In this review, we review the progress of room temperature infrared photodetectors with hybrid structure based on 2D materials in recent years, focusing mainly on 2D-nD (n = 0, 1, 2) heterostructures, the integration between 2D materials and on-chip or plasmonic structure. Finally, we summarize the current challenges and point out the future development direction.

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Cited by in corpus (2)

• Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As${}_x$P${}_{1-x}$ gate layer
• Effect of electron thermal conductivity on resonant plasmonic detection in the metal/black-AsP/graphene FET terahertz hot-electron bolometers