Sequential Edge-Epitaxy in 2D Lateral Heterostructures

Abstract

Two-dimensional (2D) heterojunctions display a remarkable potential for application in high performance, low power electro-optical systems. p-n junctions based on vertically stacked heterostructures have shown very promising performance as tunneling transistors, light emitting devices and photodetectors, and as photovoltaic cells . Although complex vertical heterostructures were fabricated via van der Waals stacking of different 2D materials, atomically sharp multi-junctions in lateral heterostructures is a quite challenging task, but a viable route towards the development of commercial applications. Previously reported approaches to obtain single-junction lateral heterostructures of the type MoX2-WX2 (X= S and/or Se), involve either a single-step or a two-step growth process. However, these methods lack the flexibility to control the lateral width of the TMD domain as well as its composition. Here, we report a simple and yet scalable synthesis approach for the fabrication of lateral multi-junction heterostructures based on the combination of different TMD monolayers [MoX2-WX2 (X2 = S2, Se2 or SSe)]. Atomically sharp lateral junctions are sequentially synthesized from solid precursors by changing only the reactive gas environment in the presence of water vapor. This allows to selectively control the water-induced oxidation, volatilization and hence the relative amount of a specific metal oxide vapor, leading to the selective edge-epitaxial growth of either MoX2 or WX2. Spatially dependent photoluminescence and atomic-resolution images confirm the high crystallinity of the monolayers and the seamless lateral connectivity between the different TMD domains. These findings could be extended to other families of 2D materials, and creates the foundation towards the development of complex and atomically thin in-plane super-lattices, devices and integrated circuits.

References in corpus (12)

• Van der Waals heterostructures
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Atomically thin p-n junctions with van der Waals heterointerfaces
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• Extraordinary room-temperature photoluminescence in WS2 monolayers
• Solar-energy conversion and light emission in an atomic monolayer p-n diode
• Picosecond photoresponse in van der Waals heterostructures
• Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
• Vapor-Solid Growth of High Optical Quality MoS2 Monolayers With Near-Unity Valley Polarization
• Excitation energy dependent Raman spectrum of MoSe2
• Hall and field-effect mobilities in few layered $p$-WSe${}_2$ field-effect transistors

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