activity
20142023
most citedSequential Edge-Epitaxy in 2D Lateral Heterostructures

549 citations · 1.3k across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mes-hall2023

Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells

Dmitry Shcherbakov, Greyson Voigt, Shahriar Memaran +8

A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlli…

cond-mat.mes-hall2022★ 16 cited

Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures

Wenkai Zheng, Li Xiang, Felipe de Quesada +18

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobil…

cond-mat.mes-hall2022★ 11 cited

Light sources with bias tunable spectrum based on van der Waals interface transistors

Hugo Henck, Diego Mauro, Daniil Domaretskiy +13

Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Control…

cond-mat.mes-hall2020★ 4 cited

Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor

D. Shcherbakov, P. Stepanov, S. Memaran +14

Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inv…

cond-mat.mtrl-sci2019★ 134 cited

Enhanced Optoelectronic Response in Bilayer Lateral Heterostructures of Transition Metal Dichalcogenides

Prasana K. Sahoo, Shahriar Memaran, Yan Xin +8

Two-dimensional lateral heterojunctions are basic components for low-power and flexible optoelectronics. In contrast to monolayers, devices based on few-layer lateral heterostructu…

cond-mat.mes-hall2018★ 25 cited

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg +11

We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous r…