Field-Effect Transistors Based on Few-Layered alpha-MoTe_2

Abstract

Here we report the properties of field-effect transistors based on few layers of chemical vapor transport grown alpha- MoTe_2 crystals mechanically exfoliated onto SiO_2. We performed field-effect and Hall mobility measurements, as well as Raman scattering and transmission electron microscopy. In contrast to both MoS_2 and MoSe_2, our MoTe_2 field-effect transistors (FETs) are observed to be hole-doped, displaying on/off ratios surpassing 106 and typical sub-threshold swings of ~ 140 mV per decade. Both field-effect and Hall mobilities indicate maximum values approaching or surpassing 10 cm^2/Vs which are comparable to figures previously reported for single or bi-layered MoS_2 and/or for MoSe_2 exfoliated onto SiO_2 at room temperature and without the use of dielectric engineering. Raman scattering reveals sharp modes in agreement with previous reports, whose frequencies are found to display little or no dependence on the number of layers. Given that both MoS_2 is electron doped, the stacking of MoTe_2 onto MoS_2 could produce ambipolar field-effect transistors and a gap modulation. Although the overall electronic performance of MoTe_2 is comparable to those of MoS_2 and MoSe_2, the heavier element Te should lead to a stronger spin orbit-coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.

29 pages, 7 figure, ACS Nano (in press)

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Cited by in corpus (42)

• Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
• Indirect-to-direct band-gap crossover in few-layer MoTe${}_2$
• Structural Semiconductor-to-Semimetal Phase Transition in Two-Dimensional Materials Induced by Electrostatic Gating
• High-Mobility Holes in Dual-Gated WSe${}_2$ Field-Effect Transistors
• Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
• Structural and Electrical Properties of MoTe${}_2$ and MoSe${}_2$ Grown by Molecular Beam Epitaxy
• A systematic study of structural, electronic and optical properties of atomic scale defects in 2D transition metal dichalcogenides MX${}_2$ (M = Mo,W; X = S, Se, Te)
• Engineering the structural and electronic phases of MoTe2 through W substitution
• First-principles theory of field-effect doping in transition-metal dichalcogenides: Structural properties, electronic structure, Hall coefficient, and electrical conductivity
• Contact Engineering High Performance n-Type MoTe2 Transistors
• Unified description of the optical phonon modes in $N$-layer MoTe${}_2$
• Double resonance Raman modes in mono- and few-layer MoTe${}_2$
• Metal to insulator quantum-phase transition in few-layered ReS${}_2$
• Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe2
• Zeeman splitting via spin-valley-layer coupling in bilayer MoTe2
• 2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
• Large-Area Two-Dimensional Layered MoTe${}_2$ by Physical Vapor Deposition and Solid-Phase Crystallization in a Tellurium-Free Atmosphere
• Role of Charge Traps in the Performance of Atomically-Thin Transistors
• Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors
• Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures
• Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe${}_2$ Tunnel Field-Effect Transistors
• Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance
• Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe${}_2$
• First Principles Study of Metal Contacts to Monolayer Black Phosphorous
• Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
• Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
• Sub 20 meV Schottky barriers in metal/MoTe2 junctions
• Low-energy excitations in type-II Weyl semimetal Td-MoTe2 evidenced through optical conductivity
• Density Functional Theory based Study of Chlorine Doped WS2-metal Interface
• Modeling of Anisotropic Two-Dimensional Materials Monolayer HfS2 and Phosphorene MOSFETs
• Investigation of laser-induced-metal phase of ${\mathrm{MoTe}}_2$ and its contact property via scanning gate microscopy
• Barkhausen effect in the first order structural phase transition in type-II Weyl semimetal MoTe2
• Black Phosphorus p-MOSFETs with High Transconductance and Nearly Ideal Subthreshold Slope
• Carrier Mobility and High-Field Velocity in 2D Transition Metal Dichalcogenides: Degeneracy and Screening
• ReS2-based field-effect transistors and photodetectors
• Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
• Scratching lithography, manipulation, and soldering of 2D materials using microneedle probes
• Symmetry induced phonon renormalization in few layers of 2H-MoTe${}_2$ transistors: Raman and first-principles studies
• 2D MoS2 under switching field conditions: study of high-frequency noise from velocity fluctuations
• Experimentally Measured Field Effect Mobilities for Few Layer van der Waals Materials
• Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers
• Band Gap Estimation of Multilayer 2D Semiconductor Channels Using Thin Graphite Contact