Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
arXiv:1603.08544 · doi:10.1021/acsnano.6b01091
Abstract
Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) and black phosphorus (BP) have beneficial electronic, optical, and physical properties at the few-layer limit. As atomically thin materials, 2D TMDCs and BP are highly sensitive to their environment and chemical modification, resulting in a strong dependence of their properties on substrate effects, intrinsic defects, and extrinsic adsorbates. Furthermore, the integration of 2D semiconductors into electronic and optoelectronic devices introduces unique challenges at metal-semiconductor and dielectric-semiconductor interfaces. Here, we review emerging efforts to understand and exploit chemical effects to influence the properties of 2D TMDCs and BP. In some cases, surface chemistry leads to significant degradation, thus necessitating the development of robust passivation schemes. On the other hand, appropriately designed chemical modification can be used to beneficially tailor electronic properties, such as controlling doping levels and charge carrier concentrations. Overall, chemical methods allow substantial tunability of the properties of 2D TMDCs and BP, thereby enabling significant future opportunities to optimize performance for device applications.
Review article in press; 43 pages and 8 figures in ACS Nano (2016)
References in corpus (98)
- Atomically thin MoS2: A new direct-gap semiconductor
- Graphene: Status and Prospects
- Black phosphorus field-effect transistors
- Boron nitride substrates for high-quality graphene electronics
- Phosphorene: A New 2D Material with High Carrier Mobility
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Control of graphene's properties by reversible hydrogenation
- Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics
- Single-Layer MoS2 Phototransistors
- Observation of tightly bound trions in monolayer MoS2
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
- Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
- Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers
- High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- Mobility engineering and metal-insulator transition in monolayer MoS2
- Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
- Isolation and characterization of few-layer black phosphorus
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Strain-induced gap modification in black phosphorus
- Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
- Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation
- Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
- The Renaissance of Black Phosphorus
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Broadband Linear-Dichroic Photodetector in a Black Phosphorus Vertical p-n Junction
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material
- Strain-Engineering Anisotropic Electrical Conductance of Phosphorene and Few-Layer Black Phosphorus
- Carbon Nanotubes as Schottky Barrier Transistors
- Strong Photoluminescence Enhancement of MoS2 through Defect Engineering and Oxygen Bonding
- Electric field effect in ultrathin black phosphorus
- Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
- Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
- Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
- Liquid exfoliation of solvent-stabilised black phosphorus: applications beyond electronics
- Superior mechanical flexibility of phosphorene and few-layer black phosphorus
- Electroluminescence in Single Layer MoS2
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus
- Environmental instability of few-layer black phosphorus
- Layer-dependent Band Alignment and Work Function of Few-Layer Phosphorene
- The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
- Channel Length Scaling of MoS2 MOSFETs
- Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus
- Enhanced Thermoelectric Efficiency via Orthogonal Electrical and Thermal Conductances in Phosphorene
- Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
- Tunable optical properties of multilayers black phosphorus thin films
- Gate-tunable Memristive Phenonmena Mediated by Grain Boundaries in Single Layer MoS2
- Oxygen defects in phosphorene
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- Designing electrical contacts to MoS monolayers: A computational study
- Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere
- Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
- Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts
- Phosphorene analogues: isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- Transport properties of monolayer MoS grown by chemical vapour deposition
- Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
- Quality heterostructures from two dimensional crystals unstable in air by their assembly in inert atmosphere
- Direct imaging of the band profile in single layer on graphite: quasiparticle energy gap, metallic edge states and edge band bending
- Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode
- Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling
- Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
- Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors
- Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
- Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
- Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy
- Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS
- Tuning of the electronic and optical properties of single layer black phosphorus by strain
- Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2
- Black Phosphorus Radio-Frequency Transistors
- Metal to insulator transition in epitaxial graphene induced by molecular doping
- Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
- Strong Thermal Transport Anisotropy and Strain Modulation in Single-Layer Phosphorene
- Anisotropic Thermal Conductivity of Exfoliated Black Phosphorus
- NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet
- Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
- Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
- Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures
- In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
- Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
- Phosphorene Oxide: Stability and electronic properties of a novel 2D material
- High Performance Field-Effect Transistor Based on Multilayer Tungsten Disulfide
- Synthesis of thin-film black phosphorus on a flexible substrate
- Valleytronics in Tin (II) Sulfide
- Electrical contacts to monolayer black Phosphorus: a first principles investigation
- Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors
- Electronic Structures of Black Phosphorus Studied by Angle-resolved Photoemission Spectroscopy
- Electronic structure of two-dimensional crystals from ab-initio theory
- Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
- Structure and Stability of Two Dimensional Phosphorene with =O or =NH Functionalization
- Phosphorene as a superior gas sensor: Selective adsorption and distinct I-V response
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- Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
- Electronic Transport in Two-Dimensional Materials
- Post Graphene 2D Chemistry: The Emerging Field of Molybdenum Disulfide and Black Phosphorus Functionalization
- Noncovalent Functionalization of Black Phosphorus
- Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
- Molecular Assembly on Two-Dimensional Materials
- Intrinsic and Extrinsic Defect-related Excitons in TMDCs
- Doped-MoSe2 nanoflakes/3d metal oxide-hydr(oxy)oxides hybrid catalysts for pH-universal electrochemical hydrogen evolution reaction
- Inter-valley dark trion states with spin lifetimes of 150 ns in WSe
- Fundamental relations for anomalous thermoelectric transport coefficients in the non-linear regime
- Monolayer black phosphorus by sequential wet-chemical surface oxidation
- Impact of complex adatom-induced interactions on quantum spin Hall phases
- Anisotropy of the Optical Properties of Pentacene:Black Phosphorus Interfaces
- Limits of Lateral Expansion in Two-Dimensional Materials with Line Defects
- High Temperature Quantum Emission from Covalently Functionalized van der Waals Heterostructures
- Electronic properties of air-sensitive nanomaterials probed with microwave impedance measurements
- Recent advances of MXene saturable absorber for near-infrared mode-locked fiber laser
- Striped Spin Density Wave in a Graphene/Black Phosphorous Heterostructure
- Reevaluating the electrical impact of atomic carbon impurities in MoS2