Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Abstract

Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP films. In this paper, we study the channel length scaling of ultra-thin BP field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted from the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs) such as MoS2 where Fermi-level is strongly pinned near conduction band edge at metal/MoS2 interface. The nature of BP transistors are Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versus by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.

Published in ACS Nano

References in corpus (2)

• Integrated Circuits Based on Bilayer MoS2 Transistors
• Channel Length Scaling of MoS2 MOSFETs

Cited by in corpus (15)

• The Renaissance of Black Phosphorus
• High quality sandwiched black phosphorus heterostructure and its quantum oscillations
• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
• Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation
• Thermoelectric power of bulk black-phosphorus
• The Role of H2O and O2 Molecules and Phosphorus Vacancies in the Structure Instability of Phosphorene
• Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus
• Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
• Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
• Mechanical Properties of Phosphorene Nanotubes: A Density Functional Tight-Binding Study
• First Principles Study of Metal Contacts to Monolayer Black Phosphorous
• Mechanical Properties and Failure Behavior of Phosphorene with Grain Boundaries
• H2 O incorporation in the phosphorene/a-SiO2 interface: A first-principles study