Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Abstract

Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP films. In this paper, we study the channel length scaling of ultra-thin BP field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted from the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs) such as MoS2 where Fermi-level is strongly pinned near conduction band edge at metal/MoS2 interface. The nature of BP transistors are Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versus by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.

Published in ACS Nano

References in corpus (15)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Atomically thin MoS2: A new direct-gap semiconductor
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Phosphorene: A New 2D Material with High Carrier Mobility
• Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
• Mobility engineering and metal-insulator transition in monolayer MoS2
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Electric field effect in ultrathin black phosphorus
• Channel Length Scaling of MoS2 MOSFETs
• Designing electrical contacts to MoS${}_2$ monolayers: A computational study
• Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
• Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
• MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Cited by in corpus (46)

• The Renaissance of Black Phosphorus
• Black phosphorus: narrow gap, wide applications
• Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
• High quality sandwiched black phosphorus heterostructure and its quantum oscillations
• Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Black-Phosphorus Terahertz Photodetectors
• Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
• In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
• Stable Aqueous Dispersions of Optically and Electronically Active Phosphorene
• Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation
• Thermoelectric power of bulk black-phosphorus
• The Role of H2O and O2 Molecules and Phosphorus Vacancies in the Structure Instability of Phosphorene
• Mid-infrared polarized emission from black phosphorus light-emitting diodes
• High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties
• Mobility anisotropy in monolayer black phosphorus due to charged impurities
• Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus
• The role of water in the preparation and stabilization of high quality phosphorene flakes
• Electronic Structure and the Properties of Phosphorene Systems
• Hydrostatic pressure induced Dirac semimetal in black phosphorus
• Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
• Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
• van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices
• Probing the anisotropic behaviors of black phosphorus by transmission electron microscope, angular-dependent Raman spectra and electronic transports measurements
• Mechanical Properties of Phosphorene Nanotubes: A Density Functional Tight-Binding Study
• Nanoscopy Reveals Metallic Black Phosphorus
• Electrical Contact between an Ultrathin Topological Dirac Semimetal and a Two-Dimensional Material
• Theoretical investigation of electron-hole complexes in anisotropic two-dimensional materials
• Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance
• First Principles Study of Metal Contacts to Monolayer Black Phosphorous
• Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
• Hybrid 2D Black Phosphorus/Polymer Materials: New Platforms for Device Fabrication
• Mechanical Properties and Failure Behavior of Phosphorene with Grain Boundaries
• Room temperature infrared photodetectors with hybrid structure based on 2D materials
• Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus
• Probing the Electronic States in Black Phosphorus Vertical Heterostructures
• Ohmic contact engineering in few-layer black Phosphorus field effect transistors
• Anisotropic Charge Carrier and Coherent Acoustic Phonon Dynamics of Black Phosphorus Studied by Transient Absorption Microscopy
• Excitonic complexes in anisotropic atomically thin two-dimensional materials: black phosphorus and TiS${}_3$
• Weak Localization in Few-Layer Black Phosphorus
• Probing 2D Black Phosphorus by Quantum Capacitance Measurements
• Isotropic charge screening of the anisotropic black phosphorus revealed by potassium adatoms
• Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
• An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors
• Semi-analytical model of the contact resistance in two-dimensional semiconductors
• H2 O incorporation in the phosphorene/a-SiO2 interface: A first-principles study