Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

Abstract

Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-um gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 uS/um at VDS = -2 V. After passivation, the same devices displayed ambipolar behavior, and when tested as n-MOSFETs, had peak gm = 66 uS/um at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 uS/um. These results are an important step toward realization of high-performance black phosphorus complementary logic circuits.

4 pages, 4 figures, 1 table

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Cited by in corpus (2)

• Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors
• An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors