activity
20142018
most citedSymmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors

56 citations · 150 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2018★ 7 cited

An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors

Elahe Yarmoghaddam, Nazila Haratipour, Steven J. Koester +1

In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the…

cond-mat.mes-hall2015★ 38 cited

Capacitive Sensing of Intercalated H2O Molecules Using Graphene

Eric J. Olson, Rui Ma, Tao Sun +5

Understanding the interactions of ambient molecules with graphene and adjacent dielectrics is of fundamental importance for a range of graphene-based devices, particularly sensors,…

cond-mat.mes-hall2015★ 39 cited

Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

Nazila Haratipour, Steven J. Koester

Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multi-layer black phosphorus aligned to a local back-gate e…

cond-mat.mes-hall2015★ 56 cited

Symmetric Complementary Logic Inverter Using Integrated Black Phosphorus and MoS2 Transistors

Yang Su, Chaitanya U. Kshirsagar, Matthew C. Robbins +2

The operation of an integrated two-dimensional complementary metal-oxide-semiconductor inverter with well-matched input/output voltages is reported. The circuit combines a few-laye…

cond-mat.mes-hall2014★ 10 cited

Black Phosphorus p-MOSFETs with High Transconductance and Nearly Ideal Subthreshold Slope

Nazila Haratipour, Matthew C. Robbins, Steven J. Koester

We report record performance for black phosphorus p-MOSFETs. The devices have locally patterned back gates and 20-nm-thick HfO2 gate dielectrics. Devices with effective gate length…