Black Phosphorus Radio-Frequency Transistors

Abstract

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.

arXiv comment15 pages, 4 figures, supporting information

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Cited by in corpus (41)

• The Renaissance of Black Phosphorus
• Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current
• Covalent Functionalization and Passivation of Exfoliated Black Phosphorus via Aryl Diazonium Chemistry
• Black phosphorus: narrow gap, wide applications
• High quality sandwiched black phosphorus heterostructure and its quantum oscillations
• Electronic Transport in Two-Dimensional Materials
• Performance of arsenene and antimonene double-gate MOSFETs from first principles
• Black-Phosphorus Terahertz Photodetectors
• Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
• In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus
• Stable Aqueous Dispersions of Optically and Electronically Active Phosphorene
• Ab initio study of electron-phonon interaction in phosphorene
• Observation of Low-frequency Interlayer Breathing Modes in Few-layer Black Phosphorus
• Interlayer Interactions in Anisotropic Atomically-thin Rhenium Diselenide
• Dynamical Evolution of Anisotropic Response in Black Phosphorus under Ultrafast Photoexcitation
• Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
• Anisotropic Ripple Deformation in Phosphorene
• A New Phosphorus Allotrope with Direct Band Gap and High Mobility
• Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies
• Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus
• Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus
• Electronic Structure and the Properties of Phosphorene Systems
• Mid-infrared time-resolved photoconduction in black phosphorus
• Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Atomic-scale imaging of few-layer black phosphorus and its reconstructed edge
• Probing the anisotropic behaviors of black phosphorus by transmission electron microscope, angular-dependent Raman spectra and electronic transports measurements
• Tunable and Broadband Coherent Perfect Absorption by Ultrathin Black Phosphorus Metasurfaces
• Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance
• Valley-engineering mobilities in two-dimensional materials
• Strain-Engineered Widely-Tunable Perfect Absorption Angle in Black Phosphorus from First-Principles
• Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
• Strong-field nonlinear optical properties of monolayer black phosphorus
• Probing the Electronic States in Black Phosphorus Vertical Heterostructures
• Anisotropic Charge Carrier and Coherent Acoustic Phonon Dynamics of Black Phosphorus Studied by Transient Absorption Microscopy
• Impact of Edge States on Device Performance of Phosphorene Heterojunction Tunneling Field Effect Transistors
• Surface buckling of phosphorene materials: determination, origin and influence on electronic structure
• Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
• Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
• A small-signal description of black phosphorus transistor technologies for high-frequency applications
• Contact resistance assessment and high-frequency performance projection of black phosphorus field-effect transistor technologies