Strain-Engineered Widely-Tunable Perfect Absorption Angle in Black Phosphorus from First-Principles
arXiv:2009.04539 · doi:10.1103/PhysRevB.102.115307
Abstract
Using the density functional theory of electronic structure, we compute the anisotropic dielectric response of bulk black phosphorus subject to strain. Employing the obtained permittivity tensor, we solve Maxwell's equations and study the electromagnetic response of a layered structure comprising a film of black phosphorus stacked on a metallic substrate. Our results reveal that a small compressive or tensile strain, , exerted either perpendicular or in the plane to the black phosphorus growth direction, efficiently controls the epsilon-near-zero response, and allows a perfect absorption tuning from low-angle of the incident beam to high values while switching the energy flow direction. Incorporating a spatially inhomogeneous strain model, we also find that for certain thicknesses of the black phosphorus, near-perfect absorption can be achieved through controlled variations of the in-plane strain. These findings can serve as guidelines for designing largely tunable perfect electromagnetic wave absorber devices.
arXiv comment15 pages, 12 figures
References in corpus (34)
- Atomically thin MoS2: A new direct-gap semiconductor
- High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
- A real-space grid implementation of the Projector Augmented Wave method
- Strain-induced gap modification in black phosphorus
- Strain engineered direct-indirect band gap transition and its mechanism in 2D phosphorene
- Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus
- Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
- A black phosphorus photo-detector for multispectral, high-resolution imaging
- Ultrafast pulse generation with black phosphorus
- Black Phosphorus Radio-Frequency Transistors
- Kohn-Sham potential with discontinuity for band gap materials
- Black phosphorus as saturable absorber for the Q-switched Er:ZBLAN fiber laser at 2.8 μm
- Perfect Absorption in Ultrathin Epsilon-Near-Zero Metamaterials Induced by Fast-Wave Non-Radiative Modes
- Funneling Light Through a Subwavelength Aperture with Epsilon-Near-Zero Materials
- Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
- Directional perfect absorption using deep subwavelength low permittivity films
- Tunable anisotropic perfect absorption in hyperbolic metamaterials based on black phosphorous/dielectric multilayer structures
- Epsilon-Near-Zero Response and Tunable Perfect Absorption in Weyl Semimetals
- Band structure engineered layered metals for low-loss plasmonics
- Giant optical activity and Kerr effect in type-I and type-II Weyl semimetals
- Black phosphorus-based anisotropic absorption structure in the mid-infrared
- Strain-engineered Majorana Zero Energy Modes and ϕ0 Josephson State in Black Phosphorus
- Strain-controlled fundamental gap and structure of bulk black phosphorus
- Tunable and Broadband Coherent Perfect Absorption by Ultrathin Black Phosphorus Metasurfaces
- Exotic leaky wave radiation from anisotropic epsilon near zero metamaterials
- Fraunhofer response and supercurrent spin switching in black phosphorus with strain and disorder
- Waveguide Modes in Weyl Semimetals with Tilted Dirac Cones
- Superior mechanical flexibility and strained-engineered direct-indirect band gap transition of green phosphorene
- Surface plasmon polaritons in thin-film Weyl semimetals
- Control of superconducting pairing symmetries in monolayer black phosphorus
- Four-wave mixing in Weyl semimetals
- Extreme anisotropy and gyrotropy of surface polaritons in Weyl semimetals