Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
arXiv:1505.00381 · doi:10.1109/IMWS-AMP.2015.7324944
Abstract
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k dielectrics or hexagonal boron nitride was demonstrated with temporal, thermal and mechanical stability, ohmic contact was achieved down to cryogenic temperatures, and cutoff frequencies was pushed above 10 GHz. These and other attractive characteristics of phosphorene promise the phosphorene FET to be a viable candidate for current-generation flexible electronics as well as future-generation ultra-thin-body low-power-consumption high-speed and high-frequency transistors.
3 pages, 2 gigures, 3 tables, in Dig. IEEE Microwave Theory and Techniques Society: International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, Suzhou, China, Jul., 2015, accepted for publication
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