82 citations · 148 across the 9 of their papers we have counts for
9 papers
A translation of Maurice Philippson's "Principles of the Electrical Resistance of Living Tissue"
James C. M. Hwang, Olivia Peytral-Rieu
The impedance of one cubic centimeter of living tissues of potato and guinea pig were measured from 500 Hz to 3 MHz. In general, the magnitude of the impedance was found to monoton…
Inverted Scanning Microwave Microscope for In Vitro Imaging and Characterization of Biological Cells
Marco Farina, Xin Jin, Gianluca Fabi +10
This paper presents for the first time an innovative instrument called an inverted scanning microwave microscope (iSMM), which is capable of noninvasive and label-free imaging and…
Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2
Kuanchen Xiong, Lei Li, Asher Madjar +7
For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 °C with nearly 100% yield. The large-scale fabrication with high yield allowed…
Rugged HBT Class-C Power Amplifiers with Base-Emitter Clamping
Xi Luo, Subrata Halder, James C. M. Hwang
The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The imp…
Scaling and High-Frequency Performance of AlN/GaN HEMTs
Xi Luo, Subrata Halder, Walter R. Curtice +4
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off freq…
Intermodulation distortion of actuated MEMS capacitive switches
Xi Luo, Yaqing Ning, David Molinero +3
For the first time, intermodulation distortion of micro-electromechanical capacitive switches in the actuated state was analyzed both theoretically and experimentally. The distorti…
Scanning Microwave Microscopy of Aluminum CMOS Interconnect Lines Buried in Oxide and Water
Xin Jin, Kuanchen Xiong, Roderick Marstell +6
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMO…
Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
Kuanchen Xiong, Xi Luo, James C. M. Hwang
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduc…
Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
Xi Luo, Yaghoob Rahbarihagh, James C. M. Hwang +3
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosph…