Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs

Abstract

This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200°C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to approximately 100 mA/mm, which could be attributed to the reduction of trapped charge in Al2O3 and/or Schottky barrier at the source and drain contacts. Thereafter, the drain current was stable between -50°C and 150°C up to at least 1000 h. These promising results suggest that environmental protection of phosphorene should not be a major concern, and passivation of phosphorene should focus on its effect on electronic control and transport as in conventional silicon MOSFETs. With cutoff frequencies approaching the gigahertz range, the present phosphorene MOSFET, although far from being optimized, can meet the frequency and stability requirements of most flexible electronics for which phosphorene is intrinsically advantageous due to its corrugated lattice structure.

To be published in IEEE Electron Device Letters

References in corpus (2)

• Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
• Performance limits projection of black phosphorous field-effect transistors

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• The Renaissance of Black Phosphorus
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• The Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures
• A Perspective on Recent Advances in Phosphorene Functionalization and its Application in Devices
• Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
• BTE-Barna: An extension of almaBTE for thermal simulation of devices based on 2D materials
• Observation of A${}_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
• A small-signal description of black phosphorus transistor technologies for high-frequency applications