82 citations · 117 across the 5 of their papers we have counts for
5 papers
Rugged HBT Class-C Power Amplifiers with Base-Emitter Clamping
Xi Luo, Subrata Halder, James C. M. Hwang
The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The imp…
Scaling and High-Frequency Performance of AlN/GaN HEMTs
Xi Luo, Subrata Halder, Walter R. Curtice +4
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off freq…
Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
Xi Luo, Kuanchen Xiong, James C. M. Hwang +2
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation…
Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
Kuanchen Xiong, Xi Luo, James C. M. Hwang
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduc…
Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
Xi Luo, Yaghoob Rahbarihagh, James C. M. Hwang +3
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosph…