82 citations · 117 across the 5 of their papers we have counts for
3 papers · 1 filter
Scaling and High-Frequency Performance of AlN/GaN HEMTs
Xi Luo, Subrata Halder, Walter R. Curtice +4
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off freq…
Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
Xi Luo, Kuanchen Xiong, James C. M. Hwang +2
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation…
Phosphorene FETs: Promising transistors based on a few layers of phosphorus atoms
Kuanchen Xiong, Xi Luo, James C. M. Hwang
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduc…