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21 papers
Probing Compactified Extra Dimensions with Gravitational Waves
Yuchen Du, Shammi Tahura, Diana Vaman +1
We study the effect of compact extra dimensions on the gravitational wave luminosity and waveform. We consider a toy model, with a compactified fifth dimension, and matter confined…
1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport
Yuchen Du, Gang Qiu, Yixiu Wang +4
Experimental demonstrations of 1D van der Waals material tellurium have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements hav…
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang, Gang Qiu, Ruoxing Wang +9
The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a var…
Performance Enhancement of Black Phosphorus Field-Effect Transistors by Chemical Doping
Yuchen Du, Lingming Yang, Hong Zhou +1
In this letter, a new approach to chemically dope black phosphorus (BP) is presented, which significantly enhances the device performance of BP field-effect transistors for an init…
Auxetic Black Phosphorus: A 2D Material with Negative Poisson's Ratio
Yuchen Du, Jesse Maassen, Wangran Wu +3
The Poisson's ratio of a material characterizes its response to uniaxial strain. Materials normally possess a positive Poisson's ratio - they contract laterally when stretched, and…
Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
Gang Qiu, Yuchen Du, Adam Charnas +7
Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is…
Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
Xi Luo, Kuanchen Xiong, James C. M. Hwang +2
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation…
Weak Localization in Few-Layer Black Phosphorus
Yuchen Du, Adam T. Neal, Hong Zhou +1
We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mo…
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
Zhe Luo, Jesse Maassen, Yexin Deng +5
Black phosphorus has been revisited recently as a new two-dimensional material showing potential applications in electronics and optoelectronics. Here we report the anisotropic in-…
Semiconducting Black Phosphorus: Synthesis, Transport Properties and Electronic Applications
Han Liu, Yuchen Du, Yexin Deng +1
Phosphorus is one of the most abundant elements preserved in earth, constructing with a fraction of ~0.1% of the earth crust. In general, phosphorus has several allotropes. The two…
Contact Research Strategy for Emerging Molybdenum Disulfide and Other Two-Dimensional Field-effect Transistors
Yuchen Du, Lingming Yang, Han Liu +1
Layered two-dimensional (2D) semiconducting transition metal dichalcogenides (TMD) have been widely isolated, synthesized, and characterized recently. Numerous 2D materials are ide…
Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
Lingming Yang, Kausik Majumdar, Han Liu +8
Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecula…
Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs
Xi Luo, Yaghoob Rahbarihagh, James C. M. Hwang +3
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosph…
Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
Adam T. Neal, Yuchen Du, Han Liu +1
We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in th…
Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling
Yuchen Du, Han Liu, Yexin Deng +1
Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the device…
High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)
Lingming Yang, Kausik Majumdar, Yuchen Du +8
In this paper, we report a novel chemical doping technique to reduce the contact resistance (Rc) of transition metal dichalcogenides (TMDs) - eliminating two major roadblocks (name…
The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
Han Liu, Adam T. Neal, Mengwei Si +2
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-laye…
MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts
Yuchen Du, Lingming Yang, Jingyun Zhang +4
For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 μm g…
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
Han Liu, Mengwei Si, Yexin Deng +6
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On…
Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
Yuchen Du, Han Liu, Adam T. Neal +2
For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction…
Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
Han Liu, Mengwei Si, Sina Najmaei +5
Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectroni…