MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Abstract

For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 μm gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS2 FETs without graphene contact layer. Temperature dependent study on MoS2/graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure.

References in corpus (4)

• Doping graphene with metal contacts
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Band offset and negative compressibility in graphene-MoS2 heterostructures

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• Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride
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