Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances

Abstract

For the first time, polyethyleneimine (PEI) doping on multilayer MoS2 field-effect transistors are investigated. A 2.6 times reduction in sheet resistance, and 1.2 times reduction in contact resistance have been achieved. The enhanced electrical characteristics are also reflected in a 70% improvement in ON current, and 50% improvement in extrinsic field-effect mobility. The threshold voltage also confirms a negative shift upon the molecular doping. All studies demonstrate the feasibility of PEI molecular doping in MoS2 transistors, and its potential applications in layer-structured semiconducting 2D crystals.

References in corpus (7)

• Single-Layer MoS2 Phototransistors
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• Channel Length Scaling of MoS2 MOSFETs
• The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
• MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming
• Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

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