Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing

Abstract

Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area (~5000 um2) monolayer MoS2 with a yield of 85 %. A central element of this process is an exposed material forming gas anneal (EM-FGA) that results in uniform FET performance metrics (i.e., field-effect mobilities, threshold voltages, and contact performance). Complementary analytical measurements show that the EM-FGA process reduces deleterious channel doping effects by decreasing organic contamination, while also reducing the prevalence of insulating molybdenum oxide, effectively improving the MoS2-gate oxide interface. The uniform FET performance metrics and high device yield achieved by applying the EM-FGA technique on large-area 2D material flakes will help advance the fabrication of complex 2D nanoelectronics devices and demonstrates the need for improved engineering of the 2D material-gate oxide interface.

References in corpus (11)

• Electric Field Effect in Atomically Thin Carbon Films
• 2D materials and van der Waals heterostructures
• Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
• Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
• Mobility engineering and metal-insulator transition in monolayer MoS2
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector
• Carrier statistics and quantum capacitance effects on mobility extraction in two-dimensional crystal semiconductor field-effect transistors
• Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors

Cited by in corpus (3)

• Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements
• Rapid, Quantitative Therapeutic Screening for Alzheimer's Enzymes Enabled by Optimal Signal Transduction with Transistors
• Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures