Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Abstract

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide (MoS2) grown by chemical vapour deposition (CVD). We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present, severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Due to the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

23 pages, 5 figures

References in corpus (7)

• Two Dimensional Atomic Crystals
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
• Channel Length Scaling of MoS2 MOSFETs
• Large and tunable photo-thermoelectric effect in single-layer MoS2
• Visibility of dichalcogenide nanolayers
• Electronic structure of two-dimensional crystals from ab-initio theory

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• Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence
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• Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-Like WSe2 by Sulfur-Assisted Chemical Vapor Deposition
• MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts
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• Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2
• Broad Band Optical Properties of Large Area Monolayer CVD Molybdenum Disulfide
• Device physics of van der Waals heterojunction solar cells
• Native point defects in few-layer phosphorene
• Hot-electron cooling by acoustic and optical phonons in monolayers of MoS${}_2$ and other transition-metal dichalcogenides
• Probing the Intrinsic Optical Quality of CVD Grown MoS2
• Full energy spectra of interface state densities for n- and p-type MoS2 field-effect transistors
• Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
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• Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures
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• Chemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase
• Investigation of Growth-Induced Strain in Monolayer MoS2 Grown by Chemical Vapor Deposition
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• Gap state analysis in electric-field-induced band gap for bilayer graphene
• Electronic transport in disordered MoS${}_2$ nanoribbons
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• Direct observation of electron capture & emission processes by the time domain charge pumping measurement of MoS2 FET
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• Probing defect states in few-layer MoS${}_2$ by conductance fluctuation spectroscopy
• Direct Investigation of the Birefringent Optical Properties of Black Phosphorus with Picosecond Interferometry
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• A polarizing situation: Taking an in-plane perspective for next-generation near-field studies
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