Transport properties of monolayer MoS${}_2$ grown by chemical vapour deposition

Abstract

Recent success in the growth of monolayer MoS${}_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS${}_2$. The devices show low temperature mobilities up to 500 cm${}^2$V${}^{-1}$s${}^{-1}$ and a clear signature of metallic conduction at high doping densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show, that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of phonons as a limiting factor of these devices is discussed.

Main text: 5 pages, 4 figures; Supplementary Information: 4 pages, 10 figures

References in corpus (5)

• Two Dimensional Atomic Crystals
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
• Mobility enhancement and temperature dependence in top-gated single-layer MoS2

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