1.2k citations · 2.3k across the 13 of their papers we have counts for
13 papers
Phase coherent transport in bilayer and trilayer MoS2
Leiqiang Chu, Indra Yudhistira, Hennrik Schmidt +3
Bilayer MoS2 is a centrosymmetric semiconductor with degenerate spin states in the six valleys at the corners of the Brillouin zone. It has been proposed that breaking of this inve…
Linking interlayer twist angle to geometrical parameters of self-assembled folded graphene structures
Johannes C. Rode, Dawei Zhai, Christopher Belke +4
Thin adhesive films can be removed from substrates, torn, and folded in distinct geometries under external driving forces. In two-dimensional materials, however, these processes ca…
Interlayer Configurations in Twisted Bilayers of Folded Graphene
Johannes C. Rode, Christopher Belke, Hennrik Schmidt +1
The folding of monolayer graphene leads to new layered systems, termed twisted bilayer graphene (TBG), generally displaying a certain interlayer rotation away from crystallographic…
Berry Phase Transition in Twisted Bilayer Graphene
Johannes C. Rode, Dmitri Smirnov, Hennrik Schmidt +1
The electronic dispersion of a graphene bilayer is highly dependent on rotational mismatch between layers and can be further manipulated by electrical gating. This allows for an un…
Magnetoresistance of monolayer graphene with short-range scattering
G. Yu. Vasileva, P. S. Alekseev, Yu. B. Vasilyev +4
We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior…
Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS
H. Schmidt, I. Yudhistira, L. Chu +4
Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials refle…
Superlattice structures in twisted bilayers of folded graphene
Hennrik Schmidt, Johannes C. Rode, Dmitri Smirnov +1
The electronic properties of bilayer graphene strongly depend on relative orientation of the two atomic lattices. Whereas Bernal-stacked graphene is most commonly studied, a rotati…
Large Thermoelectricity via Variable Range Hopping in Chemical Vapor Deposition Grown Single-layer MoS2
Jing Wu, Hennrik Schmidt, Amara Kiran Kumar +3
Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of ex…
Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors
Leiqiang Chu, Hennrik Schmidt, Jiang Pu +4
Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density…
Electric field effect in ultrathin black phosphorus
Steven P. Koenig, Rostislav A. Doganov, Hennrik Schmidt +2
Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here we demonstrate few-layer black phosphorus fiel…
Transport properties of monolayer MoS grown by chemical vapour deposition
Hennrik Schmidt, Shunfeng Wang, Leiqiang Chu +8
Recent success in the growth of monolayer MoS via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic an…
Mixing of Edge States at a Bipolar Graphene Junction
H. Schmidt, J. C. Rode, C. Belke +2
An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different…
Aharonov-Bohm effect in an electron-hole graphene ring system
D. Smirnov, H. Schmidt, R. J. Haug
Aharonov-Bohm oscillations are observed in a graphene quantum ring with a top gate covering one arm of the ring. As graphene is a gapless semiconductor this geometry allows to stud…